vrrm
3300 V
ifav
290 A/°C
ifsm
4.5 A
I²t
101 A²∙s∙10³
vfto
1.86 V
rf
4.100 mΩ
qrr
55 µC
trr
1.3 µs
if
500 A
diF/dt
100 A/µs
tjmax
125 °C
rth(j-h)
50.0 °C/kW
rth(j-h)
55.7 °C/kW
f
8.0/9.0 kN
Φ Max and Pole
42/25 mm
Height
14.6 mm
IEC60747-2 compliant
Highly reliable device in press-pack case
Possibility of parallel and series connections
Low losses
High di/dt capability
High frequency application
Snubberless operation
Junction temperature range: 125 – 150 °C
Improved recovery softness
Suitable as freewheeling, snubber and clamp diode in IGCT and IGBT circuits